Walsh, LA;Weiland, C;McCoy, AP;Woicik, JC;Lee, RTP;Lysaght, P;Hughes, G

2016

October

Journal of Applied Physics

Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Published

0 ()

OHMIC CONTACTS N-INGAAS TECHNOLOGY MOSFET

120

The electrical and chemical stability of Mo-InGaAs films for source-drain applications in transistor structures has been investigated. It was found that for 5 nm thick Mo films, the sheet resistance remains approximately constant with increasing anneal temperatures up to 500 degrees C. A combined hard x-ray photoelectron spectroscopy and x-ray absorption spectroscopy analysis of the chemical structure of the Mo-InGaAs alloy system as a function of annealing temperature showed that the interface is chemically abrupt with no evidence of inter-diffusion between the Mo and InGaAs layers. These results indicate the suitability of Mo as a thermally stable, low resistance source-drain contact metal for InGaAs-channel devices. Published by AIP Publishing.

MELVILLE

0021-8979

10.1063/1.4964251