Peer-Reviewed Journal Details
Mandatory Fields
E. O’Connor, R. Long, K. Thomas, F. Chalvet, M. E. Pemble, and P. K. Hurley, B. Brennan, G. Hughes. S. B. Newcomb.
2008
APPLIED PHYSICS LETTERS (PRINT)
In-situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric.
Published
()
Optional Fields
92
022902
0003-6951
Grant Details