Hurley, PK;Cherkaoui, K;McDonnell, S;Hughes, G;Groenland, AW

2007

August

Microelectronics and Reliability

Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks

Published

10 ()

CHEMICAL-VAPOR-DEPOSITION BOND-TYPE DEFECTS SI(100)/HFO2 INTERFACE DIELECTRICS HFO2 (100)SI SILICON ORIGIN STATES TRAPS

47

1195

1201

The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 degrees C. (c) 2006 Elsevier Ltd. All rights reserved.

OXFORD

0026-2714

10.1016/j.microrel.2006..09.030