Peer-Reviewed Journal Details
Mandatory Fields
Lankinen, A;Svensk, O;Mattila, M;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L;Paulmann, C
2008
January
Journal of X-Ray Science and Technology
X-ray excited optical luminescence of Mg-doped GaN
Published
3 ()
Optional Fields
UNDOPED GAN BAND
16
215
220
X-ray excited optical luminescence (XEOL) measurements of Mg-doped GaN were made using continuous spectrum of synchrotron radiation. The samples were grown by metalorganic vapour phase epitaxy (MOVPE) on alpha-Al2O3 substrates. The electrical activation of the Mg dopants by thermal annealing was detected in the room-temperature XEOL spectra, but not in the ultraviolet light excitation low-temperature photoluminescence (PL) spectra. The better results of the X-ray excitation over the ultraviolet excitation PL is attributed to the larger penetration depth of X-rays in heavily Mg-doped GaN. The activation of the Mg dopants was confirmed using Hall measurements.
AMSTERDAM
0895-3996
Grant Details