McNally, PJ;Curley, J;Krier, A;Mao, Y;Richardson, J;Tuomi, T;Taskinen, M;Rantamaki, R;Prieur, E;Danilewsky, A

1998

April

Semiconductor Science and Technology

An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography

Published

4 ()

INAS-ENRICHED COMPOSITION LIGHT-EMITTING-DIODES ROOM-TEMPERATURE PHOTOLUMINESCENCE LPE 4.2-MU-M GROWTH LASERS CO2

13

345

349

Synchrotron x-ray topography was used to evaluate dislocation generation for liquid phase heteroepitaxy of strained layer In0.97Ga0.03As on n-type InAs substrates. Severe misfit dislocation generation is observed for epilayer thicknesses of 4 mu m and many of these form threading dislocations which are observed at the surface. However, for thicker epilayer growth (up to 70 mu m in this study), this misfit dislocation generation appears to be confined to a region close to the heterointerface, with few threading dislocations approaching the surface. These data correlates well with photoluminescence and optical microscopy measurements.

BRISTOL

0268-1242