Peer-Reviewed Journal Details
Mandatory Fields
Knuuttila, L;Lankinen, A;Likonen, J;Lipsanen, H;Lu, X;McNally, P;Riikonen, J;Tuomi, T
2005
November
Japanese Journal of Applied Physics
Low temperature growth GaAs on Ge
Published
26 ()
Optional Fields
VAPOR-PHASE EPITAXY MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION SOLAR-CELLS ANTIPHASE BOUNDARIES TOPOGRAPHY SI PHOTOLUMINESCENCE HETEROSTRUCTURES SEMICONDUCTORS
44
7777
7784
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530 degrees C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm(-2) for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.
TOKYO
0021-4922
10.1143/JJAP.44.7777
Grant Details