Peer-Reviewed Journal Details
Mandatory Fields
McNally, PJ;Kanatharana, J;Toh, BHW;McNeill, DW;Tuomi, T;Danilewsky, AN;Knuuttila, L;Riikonen, J;Toivonen, J
2004
November
Semiconductor Science and Technology
Comparison of induced stresses due to electroless versus sputtered copper interconnect technology
Published
1 ()
Optional Fields
X-RAY TOPOGRAPHY MECHANICAL STRESSES SURFACE FILMS DIFFRACTION RELIABILITY CRYSTALS ULSI
19
1280
1284
Mechanical strains and stresses are a major concern in the development of copper-based on-chip metallization. Synchrotron x-ray topography and micro-Raman spectroscopy have been used to confirm that the stress regimes imposed in the underlying Si substrate as a result of electroless or sputtered Cu deposition are very different. For the same copper geometry and line width, the electroless Cu metallization places the Si near the outside edge of the metal line in a tensile stress, whereas, the sputtered Cu metallization puts the Si near the outside edge of the metal line in compression. This may have implications for device operation, compatibility with inter-level dielectrics and device reliability.
BRISTOL
0268-1242
10.1088/0268-1242/19/11/012
Grant Details