O'Connor, E;Brennan, B;Djara, V;Cherkaoui, K;Monaghan, S;Newcomb, SB;Contreras, R;Milojevic, M;Hughes, G;Pemble, ME;Wallace, RM;Hurley, PK
A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers