Peer-Reviewed Journal Details
Mandatory Fields
Brennan, B;Kumarappan, K;Hughes, G
2013
November
Physica Status Solidi - Rapid Research Letetrs
Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy
Published
2 ()
Optional Fields
III-V GAAS(100) SURFACE OXIDES
7
989
992
The removal of the native oxides from the In0.53Ga0.47As surface by exposure to atomic hydrogen has been investigated by highly surface sensitive synchrotron radiation based photoelectron spectroscopy. This shows that it is possible to fully remove the arsenic oxides at low temperatures, while still leaving a low concentration of stable Ga2O and In2O at the surface, and no evidence of indium loss from the substrate. The removal of surface carbon contamination is also seen, however full removal is only detected in the absence of prior substrate annealing. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
WEINHEIM
1862-6254
10.1002/pssr.201308038
Grant Details