Peer-Reviewed Journal Details
Mandatory Fields
Islam, MS;McNally, PJ
2001
April
IEEE Transactions on Electron Devices
Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts for the fabrication of GaAs MESFETs
Published
1 ()
Optional Fields
N-GAAS
48
823
825
GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts fur the first time, MESFETs with Pd/Ge Oohmic contacts are fabricated fur comparison, Thermal stability of the Pd/Sn, Pd/Ge and Pd/Sn/Au ohmic contacts is also presented.
NEW YORK
0018-9383
Grant Details