Peer-Reviewed Journal Details
Mandatory Fields
Lankinen, A;Knuuttila, L;Kostamo, P;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L
2009
November
Journal of Crystal Growth
Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
Published
9 ()
Optional Fields
EPITAXIAL MULTILAYERS STRAIN RELAXATION THERMAL-EXPANSION DEFECTS CRYSTALS DISLOCATIONS MISFIT ACCOMMODATION LATTICE GE
311
4619
4627
Ga(1-x)In(x)P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga(0.5094)In(0.4906)P epilayers having a + 3.8 x 10(-4) lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga(0.4995)In(0.5005)P epilayers having a lattice mismatch of -3.5 x 10(-4) to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 degrees C. The Matthews-Blakeslee model for critical thickness was matched to the observed MID pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 degrees mixed < 101 > {111} type, originate at the hillocks. (C) 2009 Elsevier B.V. All rights reserved.
AMSTERDAM
0022-0248
10.1016/j.jcrysgro.2009.08.032
Grant Details