Peer-Reviewed Journal Details
Mandatory Fields
Chen, WM;McNally, PJ;Shvyd'ko, YV;Tuomi, T;Danilewsky, AN;Lerche, M
2003
May
Journal of Crystal Growth
Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography
Published
10 ()
Optional Fields
BASAL SLIP OPTICAL APPLICATIONS ALPHA-AL2O3 CRYSTALS BACKSCATTERING RADIATION DEVICES
252
113
119
Dislocations in high quality Heat-Exchanger Method (HEM) produced sapphire were analyzed with the white beam large area transmission synchrotron X-ray topography technique. After analysis the dislocations for different Laue spots, i.e. different diffraction vectors, in one recorded film, three kinds of dislocations, i.e. screw, edge and mixed dislocations were identified in the studied HEM sapphire, but most are mixed type, whose Burgers vectors belong to the two groups of <2 (1) over bar(1) over bar0> and <1 0(1) over bar 0 >. (C) 2003 Elsevier Science B.V. All rights reserved.
AMSTERDAM
0022-0248
10.1016/S0022-0248(03)00884-4
Grant Details