Peer-Reviewed Journal Details
Mandatory Fields
Chauhan L.;Gajula D.;McNeill D.;Hughes G.
2014
October
Applied Surface Science
High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
Published
3 ()
Optional Fields
InGaAs Passivation Photoemission Sulphur Synchrotron
317
696
700
© 2014 Elsevier B.V. All rights reserved. High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature thermal stability of the ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.
0169-4332
10.1016/j.apsusc.2014.08.180
Grant Details