Peer-Reviewed Journal Details
Mandatory Fields
Lin J.;Walsh L.;Hughes G.;Woicik J.;Povey I.;O'Regan T.;Hurley P.
2014
July
Journal of Applied Physics
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga 0.47As capacitor structures
Published
5 ()
Optional Fields
116
2
Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al 2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al 2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In 0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In 0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge. © 2014 AIP Publishing LLC.
0021-8979
10.1063/1.4887517
Grant Details