Peer-Reviewed Journal Details
Mandatory Fields
Wittge J.;Danilewsky A.;Allen D.;McNally P.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Garagorri J.;Elizalde M.;Jacques D.;Fossati M.;Bowen D.;Tanner B.
2010
October
Journal of Applied Crystallography
Dislocation sources and slip band nucleation from indents on silicon wafers
Published
10 ()
Optional Fields
dislocations in situ observations rapid thermal annealing slip bands X-ray diffraction imaging
43
5 PART 1
1036
1039
The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied by in situ X-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation. © 2010 International Union of Crystallography Printed in Singapore-all rights reserved.
0021-8898
10.1107/S0021889810029894
Grant Details