Peer-Reviewed Journal Details
Mandatory Fields
Chellappan R.;Gajula D.;McNeill D.;Hughes G.
2014
February
Journal of Physics D - Applied Physics
High-temperature thermal stability study of 1 nm Al2O 3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy
Published
1 ()
Optional Fields
ALD Al2O 3 deposition indium arsenide sulfur passivation x-ray photoemission spectroscopy
47
5
High-resolution soft x-ray photoemission spectroscopy (SXPS) has been used to study the high-temperature thermal stability of ultra-thin atomic layer deposited (ALD) Al2O3 layers (∼1 nm) on sulfur passivated and native oxide covered InAs surfaces. While the arsenic oxides were removed from both interfaces following a 600 °C anneal, a residual indium oxide signal remained. No significant differences were observed between the sulfur passivated and native oxide surfaces other than the thickness of the interfacial oxide layer while the Al2O3 stoichiometry remained unaffected by the anneals. The energy band offsets were determined for the Al2O3 on the sulfur passivated InAs surface using both valence band edge and shallow core-level photoemission measurements. © 2014 IOP Publishing Ltd.
0022-3727
10.1088/0022-3727/47/5/055107
Grant Details