Peer-Reviewed Journal Details
Mandatory Fields
Chellappan R.;Gajula D.;McNeill D.;Hughes G.
2014
February
Applied Surface Science
High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission
Published
4 ()
Optional Fields
ALD HfO2 Annealing Core level photoemission Germanium Post deposition
292
345
349
High resolution soft x-ray photoemission spectroscopy (SXPS) have been used to study the high temperature thermal stability of ultra-thin atomic layer deposited (ALD) HfO2 layers (∼1 nm) on sulphur passivated and hydrofluoric acid (HF) treated germanium surfaces. The interfacial oxides which are detected for both surface preparations following HfO2 deposition can be effectively removed by annealing upto 700 C without any evidence of chemical interaction at the HfO2/Ge interface. The estimated valence and conduction band offsets for the HfO2/Ge abrupt interface indicated that effective barriers exist to inhibit carrier injection. © 2013 Elsevier B.V.
0169-4332
10.1016/j.apsusc.2013.11.142
Grant Details