Peer-Reviewed Journal Details
Mandatory Fields
Danilewsky A.;Wittge J.;Hess A.;Cröll A.;Rack A.;Allen D.;McNally P.;Dos Santos Rolo T.;Vagovič P.;Baumbach T.;Garagorri J.;Elizalde M.;Tanner B.
2011
November
Physica Status Solidi (A) Applications and Materials
Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments
Published
11 ()
Optional Fields
dislocations in situ real-time slip bands X-ray topography
208
11
2499
2504
We describe a rapid digital system for X-ray diffraction imaging and demonstrate its application to the real-time identification of edge defects in a silicon wafer that had been subjected to rapid thermal annealing. The application of the system to the in situ study of slip nucleation at the location of mechanical wafer defects, indents and a thermocouple, and the subsequent dislocation dynamics is presented. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
1862-6300
10.1002/pssa.201184264
Grant Details