Peer-Reviewed Journal Details
Mandatory Fields
Byun K.;Fleming P.;Bennett N.;Gity F.;McNally P.;Morris M.;Ferain I.;Colinge C.
2011
June
Journal of Applied Physics
Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation
Published
13 ()
Optional Fields
109
12
In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. © 2011 American Institute of Physics.
0021-8979
10.1063/1.3601355
Grant Details