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Gregory Hughes

PROF

Contact Details


Invent

T: Ext. 5390
E: Greg.Hughes@dcu.ie
Professor
National Centre For Plasma Science And Technology (Ncpst)
RIS Office
INVENT Building
DCU
Glasnevin
Dublin

T: 0035317005390
F: 0035317005384
M: 0876813022
E: greg.hughes@dcu.ie
Researcher Photo

Biography

Prof. Greg Hughes holds a B.Sc in Chemistry and a PhD in semiconductor physics from the University of Ulster, Northern Ireland. Following a two year post-doctoral position in the IBM research division at Yorktown Heights, he joined the School of Physical Sciences at Dublin City University where he still works. He spent a sabbatical year at the Technical University of Berlin on an Alexander von Humboldt research fellowship in 1994 and was a Visiting Research Professor at Boston University in 2001 and 2003. He is the author of over 150 research papers in the field of surface science and his current research team is working on projects relating to the characterisation of novel materials for use in the semiconductor device industry. He currently holds the position of Vice-President for Research and Innovation. 



Research Interests

Investigation of chemical interactions on semiconductor surfaces, including Schottky Barrier formation, surface exchange reactions, surface chemical passivation and heteroepitaxial growth. Investigations of the interactions of group VI elements with semiconductor surfaces with the specific objective of improving the electrical characteristics of multiplayer structures fabricated on these surfaces. Electrical and chemical characterisation of thin film dielectric layers used in advanced transistor fabrication technology. Developing an understanding of the chemical and structural interactions of organic molecules with semiconductor surfaces. These studies involve investigation of direct bonding mechanisms between organic molecules and surface atoms with a view to exploiting these hybrid organic-inorganic structures for novel electronic device and sensor applications.

Peer Reviewed Journals

  Year Publication
2018 'Investigation of nitrogen incorporation into manganese based copper diffusion barrier layers for future interconnect applications'
Selvaraju V.;Brady-Boyd A.;O'Connor R.;Hughes G.;Bogan J. (2018) 'Investigation of nitrogen incorporation into manganese based copper diffusion barrier layers for future interconnect applications'. Surfaces And Interfaces, 13 :133-138 [DOI] [Details]
2018 'Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films'
Flynn, SP;Bogan, J;Lundy, R;Khalafalla, KE;Shaw, M;Rodriguez, BJ;Swift, P;Daniels, S;O'Connor, R;Hughes, G;Kelleher, SM (2018) 'Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films'. Nanotechnology, 29 [DOI] [Details]
2018 'On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers'
Brady-Boyd, A;O'Connor, R;Armini, S;Selvaraju, V;Hughes, G;Bogan, J (2018) 'On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers'. Applied Surface Science, 427 :260-266 [DOI] [Details]
2018 'Synchrotron radiation study of metallic titanium deposited on dielectric substrates'
Bogen, J;Selvaraju, V;Brady-Boyd, A;Hughes, G;O'Connor, R (2018) 'Synchrotron radiation study of metallic titanium deposited on dielectric substrates'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 36 [DOI] [Details]
2017 'Controlling wettability of PECVD-deposited dual organosilicon/carboxylic acid films to influence DNA hybridisation assay efficiency'
Flynn, SP;Monaghan, R;Bogan, J;McKenna, M;Cowley, A;Daniels, S;Hughes, G;Kelleher, SM (2017) 'Controlling wettability of PECVD-deposited dual organosilicon/carboxylic acid films to influence DNA hybridisation assay efficiency'. Journal of Materials Chemistry B, 5 :8378-8388 [DOI] [Details]
2017 'Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system'
Byrne, C;Brennan, B;Lundy, R;Bogan, J;Brady, A;Gomeniuk, YY;Monaghan, S;Hurley, PK;Hughes, G (2017) 'Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system'. Materials Science in Semiconductor Processing, 63 :227-236 [DOI] [Details]
2017 'Long-term stability of mechanically exfoliated MoS2 flakes'
Budania, P;Baine, P;Montgomery, J;McGeough, C;Cafolla, T;Modreanu, M;McNeill, D;Mitchell, N;Hughes, G;Hurley, P (2017) 'Long-term stability of mechanically exfoliated MoS2 flakes'. MRS Communications, 7 :813-818 [DOI] [Details]
2016 'In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures'
Byrne C.;Brennan B.;McCoy A.;Bogan J.;Brady A.;Hughes G. (2016) 'In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures'. ACS applied materials & interfaces, 8 (4):2470-2477 [DOI] [Details]
2016 'Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts'
Walsh, LA;Weiland, C;McCoy, AP;Woicik, JC;Lee, RTP;Lysaght, P;Hughes, G (2016) 'Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts'. Journal of Applied Physics, 120 [DOI] [Details]
2016 'In-situ surface and interface study of atomic oxygen modified carbon containing porous low-$\kappa$ dielectric films for barrier layer applications'
Bogan, J and Lundy, Ross and P. McCoy, A and O'Connor, R and Byrne, C and Walsh, L and Casey, P and Hughes, G (2016) 'In-situ surface and interface study of atomic oxygen modified carbon containing porous low-$\kappa$ dielectric films for barrier layer applications'. Journal of Applied Physics, 120 (10) [Details]
2015 'The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-$\kappa$ dielectric materials'
McCoy, AP and Bogan, J and Walsh, L and Byrne, C and O’Connor, R and Woicik, JC and Hughes, G (2015) 'The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-$\kappa$ dielectric materials'. Journal of Physics D: Applied Physics, 48 (32) [Details]
2014 'Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-$\kappa$ dielectrics'
Bogan, J and McCoy, AP and O’Connor, R and Casey, P and Byrne, C and Hughes, G (2014) 'Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-$\kappa$ dielectrics'. Microelectronic Engineering, 130 :46-51 [Details]
2012 'STEM Analysis Of Cu(Mn) Self-Forming Diffusion Barriers on SiO2 For Applications In The Semiconductor Industry'
Lozano J.;Bogan J.;Casey P.;McCoy A.;Hughes G.;Nellist P. (2012) 'STEM Analysis Of Cu(Mn) Self-Forming Diffusion Barriers on SiO2 For Applications In The Semiconductor Industry'. Microscopy and Microanalysis, 18 :1842-1843 [DOI] [Details]
2006 'Photoemission, NEXAFS and STM studies of pentacene thin films on Au(100)'
McDonald, O. and Cafolla, A. A. and Carty, D. and Sheerin, G. and Hughes, G. (2006) 'Photoemission, NEXAFS and STM studies of pentacene thin films on Au(100)'. SURFACE SCIENCE, 600 (16):3217-3225 [DOI] [Details]
2006 'X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers'
O’Connor, R and Hughes, G and Glans, P-A and Learmonth, T and Smith, KE (2006) 'X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers'. Applied Surface Science, 253 (5):2770-2775 [Details]
2006 'Photoemission studies of pulsed-RF plasma nitrided ultra-thin SiON dielectric layers'
O’Connor, R and McDonnell, S and Hughes, G and Smith, KE (2006) 'Photoemission studies of pulsed-RF plasma nitrided ultra-thin SiON dielectric layers'. Surface science, 600 (3):532-536 [Details]
2006 'Synchrotron photoemission studies of pentacene films on Cu(110)'
McDonald, O. and Cafolla, A. A. and Li, Zheshen and Hughes, G. (2006) 'Synchrotron photoemission studies of pentacene films on Cu(110)'. SURFACE SCIENCE, 600 (9):1909-1916 [DOI] [Details]
2005 'Synchrotron radiation photoemission studies of the pentacene - Ag/Si(111) root 3 x root 3 interface'
Hughes, G and Carty, D and McDonald, O and Cafolla, AA (2005) 'Synchrotron radiation photoemission studies of the pentacene - Ag/Si(111) root 3 x root 3 interface'. SURFACE SCIENCE, 580 (1-3):167-172 [DOI] [Details]
2005 'Core level photoemission studies of the interaction of pentacene with the Si(111) (7 x 7) surface'
Hughes, G and Carty, D and Cafolla, AA (2005) 'Core level photoemission studies of the interaction of pentacene with the Si(111) (7 x 7) surface'. SURFACE SCIENCE, 582 (1-3):90-96 [DOI] [Details]
2004 'Long-range order in a multilayer organic film templated by a molecular-induced surface reconstruction: Pentacene on Au(110)'
Guaino, P and Carty, D and Hughes, G and McDonald, O and Cafolla, AA (2004) 'Long-range order in a multilayer organic film templated by a molecular-induced surface reconstruction: Pentacene on Au(110)'. APPLIED PHYSICS LETTERS, 85 (14):2777-2779 [DOI] [Details]
2003 'An STM investigation of the interaction and ordering of pentacene molecules on the Ag/Si(111)-(root 3 x root 3)R30 degrees surface'
Guaino, P and Cafolla, AA and Carty, D and Sheerin, G and Hughes, G (2003) 'An STM investigation of the interaction and ordering of pentacene molecules on the Ag/Si(111)-(root 3 x root 3)R30 degrees surface'. SURFACE SCIENCE, 540 (1):107-116 [DOI] [Details]
2003 'Scanning tunneling microscopy study of pentacene adsorption on Ag/Si(111)-(root 3 x root 3)R30 degrees'
Guaino, P and Carty, D and Hughes, G and Moriarty, P and Cafolla, AA (2003) 'Scanning tunneling microscopy study of pentacene adsorption on Ag/Si(111)-(root 3 x root 3)R30 degrees'. APPLIED SURFACE SCIENCE, 212 :537-541 [DOI] [Details]
2002 'Core level photoemission and scanning tunneling microscopy study of the interaction of pentacene with the Si(100) surface'
Hughes, G and Roche, J and Carty, D and Cafolla, T and Smith, KE (2002) 'Core level photoemission and scanning tunneling microscopy study of the interaction of pentacene with the Si(100) surface'. JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B, 20 (4):1620-1625 [DOI] [Details]
1997 'Absence of long-range ordered reconstruction on the GaAs(311)A surface'
Moriarty, P and Ma, YR and Dunn, AW and Beton, PH and Henini, M and McGinley, C and McLoughlin, E and Cafolla, AA and Hughes, G and Downes, S and Teehan, D and Murphy, B (1997) 'Absence of long-range ordered reconstruction on the GaAs(311)A surface'. PHYSICAL REVIEW B, 55 (23):15397-15400 [DOI] [Details]
1997 'Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction'
Cafolla, AA and McGinley, C and McLoughlin, E and Hughes, G and Moriarty, P and Dunn, AW and Ma, YR and Teehan, D and Murphy, B and Downes, S and Woolf, DA (1997) 'Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction'. SURFACE SCIENCE, 377 (1-3):130-134 [DOI] [Details]
1995 'CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE'
MORIARTY, P and MURPHY, B and ROBERTS, L and CAFOLLA, AA and HUGHES, G and KOENDERS, L and BAILEY, P and WOOLF, DA (1995) 'CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE'. APPLIED PHYSICS LETTERS, 67 (3):383-385 [DOI] [Details]
1994 'CHEMICAL AND STRUCTURAL STUDIES OF THE INTERACTIONS OF MOLECULAR SULFUR WITH THE GAAS(111)A AND GAAS(111)B SURFACES'
MURPHY, B and MORIARTY, P and ROBERTS, L and CAFOLLA, T and HUGHES, G and KOENDERS, L and BAILEY, P (1994) 'CHEMICAL AND STRUCTURAL STUDIES OF THE INTERACTIONS OF MOLECULAR SULFUR WITH THE GAAS(111)A AND GAAS(111)B SURFACES'. SURFACE SCIENCE, 317 (1-2):73-83 [DOI] [Details]
1994 'PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE'
MORIARTY, P and MURPHY, B and ROBERTS, L and CAFOLLA, AA and HUGHES, G and KOENDERS, L and BAILEY, P (1994) 'PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE'. PHYSICAL REVIEW B, 50 (19):14237-14245 [DOI] [Details]
2016 'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'
Mirabelli G.;McGeough C.;Schmidt M.;McCarthy E.;Monaghan S.;Povey I.;McCarthy M.;Gity F.;Nagle R.;Hughes G.;Cafolla A.;Hurley P.;Duffy R. (2016) 'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'. Journal of Applied Physics, 120 (12) [DOI] [Details]
2016 'In-situ surface and interface study of atomic oxygen modified carbon containing porous low-kappa dielectric films for barrier layer applications'
Bogan, J;Lundy, R;McCoy, AP;O'Connor, R;Byrne, C;Walsh, L;Casey, P;Hughes, G (2016) 'In-situ surface and interface study of atomic oxygen modified carbon containing porous low-kappa dielectric films for barrier layer applications'. Journal of Applied Physics, 120 [DOI] [Details]
2016 'Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts'
Walsh L.;Weiland C.;McCoy A.;Woicik J.;Lee R.;Lysaght P.;Hughes G. (2016) 'Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts'. Journal of Applied Physics, 120 (13) [DOI] [Details]
2016 'Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal'
Byrne, C;Brady, A;Walsh, L;Mccoy, AP;Bogan, J;McGlynn, E;Rajani, KV;Hughes, G (2016) 'Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal'. Thin Solid Films, 599 :59-63 [DOI] [Details]
2016 'A photoemission study of the effectiveness of nickel, manganese, and cobalt based corrosion barriers for silicon photo-anodes during water oxidation'
O'Connor R.;Bogan J.;McCoy A.;Byrne C.;Hughes G. (2016) 'A photoemission study of the effectiveness of nickel, manganese, and cobalt based corrosion barriers for silicon photo-anodes during water oxidation'. Journal of Applied Physics, 119 (19) [DOI] [Details]
2015 'Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers'
Chauhan L.;Gupta S.;Jaiswal P.;Bhat N.;Shivashankar S.;Hughes G. (2015) 'Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers'. Thin Solid Films, 589 :264-267 [DOI] [Details]
2015 'Oxidation of ruthenium thin films using atomic oxygen'
McCoy, AP;Bogan, J;Brady, A;Hughes, G (2015) 'Oxidation of ruthenium thin films using atomic oxygen'. Thin Solid Films, 597 :112-116 [DOI] [Details]
2015 'Growth and characterization of thin manganese oxide corrosion barrier layers for silicon photoanode protection during water oxidation'
O'Connor R.;Bogan J.;Fleck N.;McCoy A.;Walsh L.;Byrne C.;Casey P.;Hughes G. (2015) 'Growth and characterization of thin manganese oxide corrosion barrier layers for silicon photoanode protection during water oxidation'. Solar Energy Materials and Solar Cells, 136 :64-69 [DOI] [Details]
2015 'High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces'
Chauhan L.;Gajula D.;Mc Neill D.;Hughes G. (2015) 'High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces'. Microelectronic Engineering, 147 :249-253 [DOI] [Details]
2015 'The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials'
McCoy A.;Bogan J.;Walsh L.;Byrne C.;O'Connor R.;Woicik J.;Hughes G. (2015) 'The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials'. Journal of Physics D - Applied Physics, 48 (32) [DOI] [Details]
2015 'Growth of isotopically enriched ZnO nanorods of excellent optical quality'
Gray C.;Cullen J.;Byrne C.;Hughes G.;Buyanova I.;Chen W.;Henry M.;McGlynn E. (2015) 'Growth of isotopically enriched ZnO nanorods of excellent optical quality'. Journal of Crystal Growth, 429 :6-12 [DOI] [Details]
2009 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda E.;Martin-Martinez J.;O'Connor E.;Hughes G.;Casey P.;Cherkaoui K.;Monaghan S.;Long R.;O'Connell D.;Hurley P. (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics and Reliability, 49 (9-11):1052-1055 [DOI] [Details]
2007 'Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature'
Rahman M.;Reid I.;Duggan P.;Dowling D.;Hughes G.;Hashmi M. (2007) 'Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature'. Surface and Coatings Technology, 201 (9-11 SPEC. ISS):4865-4872 [DOI] [Details]
2009 'Degradation dynamics and breakdown of MgO gate oxides'
Miranda E.;O'Connor E.;Hughes G.;Casey P.;Cherkaoui K.;Monaghan S.;Long R.;O'Connell D.;Hurley P. (2009) 'Degradation dynamics and breakdown of MgO gate oxides'. Microelectronic Engineering, 86 (7-9):1715-1717 [DOI] [Details]
2008 'GaAs interfacial self-cleaning by atomic layer deposition'
Hinkle C.;Sonnet A.;Vogel E.;McDonnell S.;Hughes G.;Milojevic M.;Lee B.;Aguirre-Tostado F.;Choi K.;Kim H.;Kim J.;Wallace R. (2008) 'GaAs interfacial self-cleaning by atomic layer deposition'. Applied Physics Letters, 92 (7) [DOI] [Details]
2009 'Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces'
Casey P.;O'Connor E.;Long R.;Brennan B.;Krasnikov S.;O'Connell D.;Hurley P.;Hughes G. (2009) 'Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces'. Microelectronic Engineering, 86 (7-9):1711-1714 [DOI] [Details]
2014 'Photoemission study of carbon depletion from ultra low-κ carbon doped oxide surfaces during the growth of Mn silicate barrier layers'
Hughes, Greg (2014) 'Photoemission study of carbon depletion from ultra low-κ carbon doped oxide surfaces during the growth of Mn silicate barrier layers'. [Details]
2014 'High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission'
Chauhan L.;Gajula D.;McNeill D.;Hughes G. (2014) 'High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission'. Applied Surface Science, 317 :696-700 [DOI] [Details]
2014 'Ni-(In,Ga)As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy'
Walsh L.;Hughes G.;Weiland C.;Woicik J.;Lee R.;Loh W.;Lysaght P.;Hobbs C. (2014) 'Ni-(In,Ga)As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy'. Physical Review Applied, 2 (6) [DOI] [Details]
2014 'Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface'
Chauhan L.;Hughes G. (2014) 'Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface'. Physica Status Solidi - Rapid Research Letetrs, 8 (2):167-171 [DOI] [Details]
2014 'The addition of aluminium to ruthenium liner layers for use as copper diffusion barriers'
McCoy A.;Bogan J.;Walsh L.;Byrne C.;Casey P.;Hughes G. (2014) 'The addition of aluminium to ruthenium liner layers for use as copper diffusion barriers'. Applied Surface Science, 307 :677-681 [DOI] [Details]
2014 'High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission'
Chellappan R.;Gajula D.;McNeill D.;Hughes G. (2014) 'High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission'. Applied Surface Science, 292 :345-349 [DOI] [Details]
2014 'Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-κ dielectrics'
Bogan J.;McCoy A.;O'Connor R.;Casey P.;Byrne C.;Hughes G. (2014) 'Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-κ dielectrics'. Microelectronic Engineering, 130 :46-51 [DOI] [Details]
2014 'High-temperature thermal stability study of 1 nm Al2O 3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy'
Chellappan R.;Gajula D.;McNeill D.;Hughes G. (2014) 'High-temperature thermal stability study of 1 nm Al2O 3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy'. Journal of Physics D - Applied Physics, 47 (5) [DOI] [Details]
2014 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga 0.47As capacitor structures'
Lin J.;Walsh L.;Hughes G.;Woicik J.;Povey I.;O'Regan T.;Hurley P. (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga 0.47As capacitor structures'. Journal of Applied Physics, 116 (2) [DOI] [Details]
2014 'Spin coating of hydrophilic polymeric films for enhanced centrifugal flow control by serial siphoning'
Kitsara M.;Nwankire C.;Walsh L.;Hughes G.;Somers M.;Kurzbuch D.;Zhang X.;Donohoe G.;O'Kennedy R.;Ducrée J. (2014) 'Spin coating of hydrophilic polymeric films for enhanced centrifugal flow control by serial siphoning'. Microfluidics and Nanofluidics, 16 (4):691-699 [DOI] [Details]
2013 'Investigation of the release of Si from SiO2 during the formation of manganese/ruthenium barrier layers'
McCoy A.;Casey P.;Bogan J.;Byrne C.;Hughes G. (2013) 'Investigation of the release of Si from SiO2 during the formation of manganese/ruthenium barrier layers'. Applied Physics Letters, 102 (20) [DOI] [Details]
2013 'Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures'
Walsh L.;Hughes G.;Lin J.;Hurley P.;O'Regan T.;Cockayne E.;Woicik J. (2013) 'Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures'. Physical Review B - Condensed Matter and Materials Physics, 88 (4) [DOI] [Details]
2013 'Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy'
Brennan, B;Kumarappan, K;Hughes, G (2013) 'Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy'. Physica Status Solidi - Rapid Research Letetrs, 7 :989-992 [DOI] [Details]
2013 'Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(1 0 0) surfaces'
Chellappan R.;Li Z.;Hughes G. (2013) 'Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(1 0 0) surfaces'. Applied Surface Science, 276 :609-612 [DOI] [Details]
2013 'In situ investigations into the mechanism of oxygen catalysis on ruthenium/manganese surfaces and the thermodynamic stability of Ru/Mn-based copper diffusion barrier layers'
Casey P.;McCoy A.;Bogan J.;Byrne C.;Walsh L.;O'Connor R.;Hughes G. (2013) 'In situ investigations into the mechanism of oxygen catalysis on ruthenium/manganese surfaces and the thermodynamic stability of Ru/Mn-based copper diffusion barrier layers'. Journal of Physical Chemistry C, 117 (31):16136-16143 [DOI] [Details]
2013 'Scanning transmission electron microscopy investigations of self-forming diffusion barrier formation in Cu(Mn) alloys on SiO2'
Lozano J.;Bogan J.;Casey P.;McCoy A.;Hughes G.;Nellist P. (2013) 'Scanning transmission electron microscopy investigations of self-forming diffusion barrier formation in Cu(Mn) alloys on SiO2'. APL Materials, 1 (4) [DOI] [Details]
2013 'Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces'
Chauhan L.;Hughes G. (2013) 'Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces'. Physica Status Solidi (A) Applications and Materials, 210 (3):519-522 [DOI] [Details]
2013 'High-resolution photoemission comparison study of interface formation between MgO and the atomically clean and Se-passivated Ge(100) surfaces'
Chellappan R.;Hughes G. (2013) 'High-resolution photoemission comparison study of interface formation between MgO and the atomically clean and Se-passivated Ge(100) surfaces'. Physica Status Solidi - Rapid Research Letetrs, 7 (8):590-592 [DOI] [Details]
2013 'Soft x-ray photoemission study of the thermal stability of the Al 2O3/Ge (100) interface as a function of surface preparation'
Chellappan R.;Rao Gajula D.;McNeill D.;Hughes G. (2013) 'Soft x-ray photoemission study of the thermal stability of the Al 2O3/Ge (100) interface as a function of surface preparation'. Journal of Applied Physics, 114 (8) [DOI] [Details]
2013 'High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (1 0 0) surface'
Chellappan R.;Li Z.;Hughes G. (2013) 'High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (1 0 0) surface'. Applied Surface Science, 285 (PARTB):153-156 [DOI] [Details]
2012 'Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2'
Murad, SNA;Baine, PT;McNeill, DW;Mitchell, SJN;Armstrong, BM;Modreanu, M;Hughes, G;Chellappan, RK (2012) 'Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2'. Solid-State Electronics, 78 :136-140 [DOI] [Details]
2012 'Chemical and structural investigations of the interactions of Cu with MnSiO 3 diffusion barrier layers'
Casey P.;Bogan J.;McCoy A.;Lozano J.;Nellist P.;Hughes G. (2012) 'Chemical and structural investigations of the interactions of Cu with MnSiO 3 diffusion barrier layers'. Journal of Applied Physics, 112 (6) [DOI] [Details]
2012 'Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers'
McCoy A.;Casey P.;Bogan J.;Lozano J.;Nellist P.;Hughes G. (2012) 'Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers'. Applied Physics Letters, 101 (23) [DOI] [Details]
2012 'High resolution synchrotron radiation based photoemission study of the in situ deposition of molecular sulphur on the atomically clean InGaAs surface'
Chauhan, L;Hughes, G (2012) 'High resolution synchrotron radiation based photoemission study of the in situ deposition of molecular sulphur on the atomically clean InGaAs surface'. Journal of Applied Physics, 111 [DOI] [Details]
2012 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide- semiconductor structures'
Walsh L.;Hughes G.;Hurley P.;Lin J.;Woicik J. (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide- semiconductor structures'. Applied Physics Letters, 101 (24) [DOI] [Details]
2012 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'
O'Connor E.;Cherkaoui K.;Monaghan S.;O'Connell D.;Povey I.;Casey P.;Newcomb S.;Gomeniuk Y.;Provenzano G.;Crupi F.;Hughes G.;Hurley P. (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'. Journal of Applied Physics, 111 (12) [DOI] [Details]
2011 'Photoemission study of carbon depletion from ultralow-carbon doped oxide surfaces during the growth of Mn silicate barrier layers'
Casey P.;Bogan J.;Hughes G. (2011) 'Photoemission study of carbon depletion from ultralow-carbon doped oxide surfaces during the growth of Mn silicate barrier layers'. Journal of Applied Physics, 110 (12) [DOI] [Details]
2011 'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'
O'Connor, E;Brennan, B;Djara, V;Cherkaoui, K;Monaghan, S;Newcomb, SB;Contreras, R;Milojevic, M;Hughes, G;Pemble, ME;Wallace, RM;Hurley, PK (2011) 'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'. Journal of Applied Physics, 109 [DOI] [Details]
2011 'Microscopic origins of the surface exciton photoluminescence peak in ZnO nanostructures'
Biswas M.;Jung Y.;Kim H.;Kumar K.;Hughes G.;Newcomb S.;Henry M.;McGlynn E. (2011) 'Microscopic origins of the surface exciton photoluminescence peak in ZnO nanostructures'. Physical Review B - Condensed Matter and Materials Physics, 83 (23) [DOI] [Details]
2011 'Synchrotron radiation photoemission study of in situ manganese silicate formation on SiO2 for barrier layer applications'
Casey P.;Bogan J.;Brennan B.;Hughes G. (2011) 'Synchrotron radiation photoemission study of in situ manganese silicate formation on SiO2 for barrier layer applications'. Applied Physics Letters, 98 (11) [DOI] [Details]
2011 'Optimisation of the ammonium sulphide (NH4)(2)S passivation process on In0.53Ga0.47As'
Brennan, B;Milojevic, M;Hinkle, CL;Aguirre-Tostado, FS;Hughes, G;Wallace, RM (2011) 'Optimisation of the ammonium sulphide (NH4)(2)S passivation process on In0.53Ga0.47As'. Applied Surface Science, 257 :4082-4090 [DOI] [Details]
2011 'Time-dependent dielectric breakdown and stress-induced leakage current characteristics of 0.7-nm-EOT HfO2 pFETs'
O'Connor R.;Hughes G.;Kauerauf T. (2011) 'Time-dependent dielectric breakdown and stress-induced leakage current characteristics of 0.7-nm-EOT HfO2 pFETs'. IEEE Transactions on Device and Materials Reliability, 11 (2):290-294 [DOI] [Details]
2011 'Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO2 substrates'
Lozano J.;Lozano-Perez S.;Bogan J.;Wang Y.;Brennan B.;Nellist P.;Hughes G. (2011) 'Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO2 substrates'. Applied Physics Letters, 98 (12) [DOI] [Details]
2011 'High resolution photoemission study of the formation and thermal stability of Mg silicide on silicon'
Casey P.;Hughes G. (2011) 'High resolution photoemission study of the formation and thermal stability of Mg silicide on silicon'. Thin Solid Films, 519 (6):1861-1865 [DOI] [Details]
2011 'The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers'
Oconnor R.;Hughes G. (2011) 'The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers'. Microelectronics and Reliability, 51 (3):524-528 [DOI] [Details]
2011 'A systematic study of (NH4)2S passivation (1%, 5%, 10%, 22%) on the interface properties of the Al2O3/In0.53Ga0.47-As/InP system for n and p-type In0.53Ga0.47-As epitaxial layers. É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace , and P.K. Hurley. '
É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace , and P.K. Hurley. (2011) 'A systematic study of (NH4)2S passivation (1%, 5%, 10%, 22%) on the interface properties of the Al2O3/In0.53Ga0.47-As/InP system for n and p-type In0.53Ga0.47-As epitaxial layers. É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace , and P.K. Hurley. '. JOURNAL OF APPLIED PHYSICS, 109 [Details]
2011 'Synchrotron radiation photoemission study of in-situ manganese silicate formation on SiO2 for barrier layer applications Patrick Casey, Barry Brennan, Justin Bogan and Greg Hughes. '
Patrick Casey, Barry Brennan, Justin Bogan and Greg Hughes. (2011) 'Synchrotron radiation photoemission study of in-situ manganese silicate formation on SiO2 for barrier layer applications Patrick Casey, Barry Brennan, Justin Bogan and Greg Hughes. '. APPLIED PHYSICS LETTERS (PRINT), 98 [Details]
2011 'Barrier behaviour and interdiffusion in thermally evaporated Mn/Cu heterostructures onto SiO2 substrates '
J. G. Lozano, J. Bogan, B. Brennan and G. Hughes (2011) 'Barrier behaviour and interdiffusion in thermally evaporated Mn/Cu heterostructures onto SiO2 substrates '. APPLIED PHYSICS LETTERS (PRINT), 98 [Details]
2011 'Reliability of thin ZrO2 gate dielectric layers '
Robert O’Connor, Greg Hughes, Thomas Kauerauf, Lars-Ake Ragnarsson. (2011) 'Reliability of thin ZrO2 gate dielectric layers '. MICROELECTRONIC ENGINEERING, 51 :524-528 [Details]
2011 'The Effect of a Post Processing Thermal Anneal on Pre-existing and Stress Induced Electrically Active Defects in Ultra-thin SiON Dielectric Layers. '
Robert O’Connor, Greg Hughes, Thomas Kauerauf, (2011) 'The Effect of a Post Processing Thermal Anneal on Pre-existing and Stress Induced Electrically Active Defects in Ultra-thin SiON Dielectric Layers. '. MICROELECTRONIC ENGINEERING, 51 :524-528 [Details]
2011 'High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system'
McDonnell S.;Brennan B.;Casey P.;Hughes G. (2011) 'High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system'. Surface Science, 605 (23-24):1925-1928 [DOI] [Details]
2011 'Chemical and structural investigation of the role of both metallic manganese and manganese oxide in the formation of manganese silicate barrier layers on SiO2 '
P.Casey, J. Bogan, J.G Lozano, P.D. Nellist, G. Hughes (2011) 'Chemical and structural investigation of the role of both metallic manganese and manganese oxide in the formation of manganese silicate barrier layers on SiO2 '. JOURNAL OF APPLIED PHYSICS, 110 [Details]
2011 'Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As '
B. Brennan, M. Milojevic, C.L. Hinkle, F.S. Aguirre-Tostado, G. Hughes and R. M. Wallace, (2011) 'Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As '. APPLIED SURFACE SCIENCE, 257 :4082-4090 [Details]
2011 'A Study of the Microscopic Origins of the Surface Exciton Photoluminescence Peak seen in ZnO Nanostructures '
Mahua Biswas, Yun S. Jung, Hong K. Kim, Kumarrappan K, Gregory J. Hughes, S.Newcomb, Martin O. Henry, Enda McGlynn (2011) 'A Study of the Microscopic Origins of the Surface Exciton Photoluminescence Peak seen in ZnO Nanostructures '. PHYSICAL REVIEW B-CONDENSED MATTER, 83 [Details]
2010 'A study of drop-coated and chemical bath-deposited buffer layers for vapor phase deposition of large area, aligned, zinc oxide nanorod arrays'
Byrne D.;McGlynn E.;Kumar K.;Biswas M.;Henry M.;Hughes G. (2010) 'A study of drop-coated and chemical bath-deposited buffer layers for vapor phase deposition of large area, aligned, zinc oxide nanorod arrays'. Crystal Growth and Design, 10 (5):2400-2408 [DOI] [Details]
2010 'Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells'
Young R.;Mereni L.;Petkov N.;Knight G.;Dimastrodonato V.;Hurley P.;Hughes G.;Pelucchi E. (2010) 'Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells'. Journal of Crystal Growth, 312 (9):1546-1550 [DOI] [Details]
2010 'Degradation and breakdown characteristics of thin MgO dielectric layers'
O'Connor, R;Hughes, G;Casey, P;Newcomb, SB (2010) 'Degradation and breakdown characteristics of thin MgO dielectric layers'. Journal of Applied Physics, 107 [DOI] [Details]
2010 'Photoemission Study of the SiO2 conversion mechanism to magnesium Silicate '
Patrick Casey and Greg Hughes. (2010) 'Photoemission Study of the SiO2 conversion mechanism to magnesium Silicate '. JOURNAL OF APPLIED PHYSICS, 107 [Details]
2010 'Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission '
B. Brennan and G. Hughes (2010) 'Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission '. JOURNAL OF APPLIED PHYSICS, 108 [Details]
2010 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition '
Patrick Casey and Greg Hughes (2010) 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition '. APPLIED SURFACE SCIENCE, 256 :7530-7534 [Details]
2010 'Photoemission study of the SiO conversion mechanism to magnesium silicate'
Patrick Casey , Greg Hughes (2010) 'Photoemission study of the SiO conversion mechanism to magnesium silicate'. Journal of Applied Physics, 107 :0741071-0741075 [Details]
2010 'A study of drop-coated and chemical bath-deposited buffer layers for vapour phase deposition of large area, aligned, zinc oxide nanorod arrays '
D. Byrne, E. McGlynn, K. Kumar, M. Biswas, M. O. Henry and G. Hughes (2010) 'A study of drop-coated and chemical bath-deposited buffer layers for vapour phase deposition of large area, aligned, zinc oxide nanorod arrays '. CRYSTAL GROWTH & DESIGN (PRINT), 10 :2400-2408 [Details]
2010 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition '
Patrick Casey and Greg Hughes (2010) 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition '. APPLIED SURFACE SCIENCE, 256 :7530-7534 [Details]
2010 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks '
Miranda, E., Martin-Martinez, J., O'Connor, E., Hughes, G.,Casey, P., Cherkaoui, K.,Monaghan, S., Long, R., O'Connell, D., Hurley, P. K. (2010) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks '. MICROELECTRONICS JOURNAL, 49 :9-11 [Details]
2010 'A novel, substrate independent three step process for the growth of uniform ZnO nanorod arrays '
D. Byrne, E. McGlynn, M.O. Henry, K. Kumar, G. Hughes (2010) 'A novel, substrate independent three step process for the growth of uniform ZnO nanorod arrays '. THIN SOLID FILMS, 518 :4489-4492 [Details]
2010 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition'
Casey P.;Hughes G. (2010) 'Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition'. Applied Surface Science, 256 (24):7530-7534 [DOI] [Details]
2010 'Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission'
Brennan, B;Hughes, G (2010) 'Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission'. Journal of Applied Physics, 108 [DOI] [Details]
2010 'Photoemission study of the SiO2 conversion mechanism to magnesium silicate'
Casey P.;Hughes G. (2010) 'Photoemission study of the SiO2 conversion mechanism to magnesium silicate'. Journal of Applied Physics, 107 (7) [DOI] [Details]
2010 'Photoemission studies of the initial interface formation of ultrathin MgO dielectric layers on the Si(111) surface'
Brennan, B;McDonnell, S;Hughes, G (2010) 'Photoemission studies of the initial interface formation of ultrathin MgO dielectric layers on the Si(111) surface'. Thin Solid Films, 518 :1980-1984 [DOI] [Details]
2009 'Degradation and Breakdown Characteristics of thin MgO Dielectric Layers '
Robert O’Connor, Greg Hughes, Patrick Casey and Simon Newcombe. (2009) 'Degradation and Breakdown Characteristics of thin MgO Dielectric Layers '. JOURNAL OF APPLIED PHYSICS, [Details]
2009 'Electrical characterization of the soft breakdown failure mode in MgO layers'
Miranda, E;O'Connor, E;Cherkaoui, K;Monaghan, S;Long, R;O'Connell, D;Hurley, PK;Hughes, G;Casey, P (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers'. Applied Physics Letters, 95 [DOI] [Details]
2009 'Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)'
Reid, I;Zhang, YF;Demasi, A;Blueser, A;Piper, L;Downes, JE;Matsuura, A;Hughes, G;Smith, KE (2009) 'Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)'. Applied Surface Science, 256 :720-725 [DOI] [Details]
2009 'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As'
Brennan, B;Milojevic, M;Kim, HC;Hurley, PK;Kim, J;Hughes, G;Wallace, RM (2009) 'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As'. Electrochemical and Solid-State Letters, 12 :205-207 [DOI] [Details]
2009 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD;O'Connor, E;Newcomb, SB;Monaghan, S;Cherkaoui, K;Casey, P;Hughes, G;Thomas, KK;Chalvet, F;Povey, IM;Pemble, ME;Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 [DOI] [Details]
2009 'Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning'
C. L. Hinkle , M. Milojevic , Barry Brennan , A. M. Sonnet , F. S. Aguirre-Tostado , Greg Hughes , E. M. Vogel , R. M. Wallace (2009) 'Detection of Ga suboxides and their impact on III-V passivation and fermi-level pinning'. APPLIED PHYSICS LETTERS (PRINT), 94 :162101-1 [Details]
2009 'Degradation dynamics and breakdown of MgO gate oxides '
E. Miranda, E. O’Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O’Connell, P.K. Hurley. (2009) 'Degradation dynamics and breakdown of MgO gate oxides '. MICROELECTRONIC ENGINEERING, 86 :1715-1717 [Details]
2009 'High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition'
McDonnell, S;Brennan, B;Hughes, G (2009) 'High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition'. Applied Physics Letters, 95 [DOI] [Details]
2009 'Growth, Ambient Stability and Electrical Characterisation of MgO thin films on Si '
P. Casey, E. O’Connor, R. Long, B. Brennan, D.O’Connell, P. Hurley and G. Hughes (2009) 'Growth, Ambient Stability and Electrical Characterisation of MgO thin films on Si '. MICROELECTRONIC ENGINEERING, 86 :1711-1714 [Details]
2009 'Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning '
C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace. (2009) 'Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning '. APPLIED PHYSICS LETTERS (PRINT), 94 [Details]
2009 'Structural Analysis, Elemental Profiling, and Electrical Characterisation of HfO2 Thin Films Deposited on In0.53Ga0.47As Surfaces by Atomic Layer Deposition. '
R. D. Long, É. O’Connor, S. Monaghan, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley.P. Casey and G. Hughes S. B. Newcomb.N. Goel, W. Tsai. (2009) 'Structural Analysis, Elemental Profiling, and Electrical Characterisation of HfO2 Thin Films Deposited on In0.53Ga0.47As Surfaces by Atomic Layer Deposition. '. JOURNAL OF APPLIED PHYSICS, 106 [Details]
2009 'Evidence of atomic disruption at the Si/SiOx interface following HfO2 deposition . '
Stephen McDonnell, Barry Brennan and Greg Hughes. (2009) 'Evidence of atomic disruption at the Si/SiOx interface following HfO2 deposition . '. APPLIED PHYSICS LETTERS (PRINT), 95 [Details]
2009 'Half-cycle ALD reaction study using O3 and H2O oxidation of the (NH4)2S passivated In0.53Ga0.47As surface '
B. Brennan, M. Milojevic, F.S. Aguirre-Tostado, C.L. Hinkle, P.K. Hurley, J. Kim, G. Hughes, and R.M. Wallace (2009) 'Half-cycle ALD reaction study using O3 and H2O oxidation of the (NH4)2S passivated In0.53Ga0.47As surface '. ELECTROCHEMISTRY COMMUNICATIONS, 12 [Details]
2008 'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'
O'Connor, E;Long, RD;Cherkaoui, K;Thomas, KK;Chalvet, F;Povey, IM;Pemble, ME;Hurley, PK;Brennan, B;Hughes, G;Newcomb, SB (2008) 'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'. Applied Physics Letters, 92 [DOI] [Details]
2008 'In-situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. '
E. O’Connor, R. Long, K. Thomas, F. Chalvet, M. E. Pemble, and P. K. Hurley, B. Brennan, G. Hughes. S. B. Newcomb. (2008) 'In-situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. '. APPLIED PHYSICS LETTERS (PRINT), 92 [Details]
2008 'Electronic structure characterization of ultra low-k carbon doped oxide using soft X-ray emission spectroscopy'
Reid, I;Zhang, Y;DeMasi, A;Hughes, G;Smith, KE (2008) 'Electronic structure characterization of ultra low-k carbon doped oxide using soft X-ray emission spectroscopy'. Thin Solid Films, 516 :4851-4854 [DOI] [Details]
2008 'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'
Cherkaoui, K;Monaghan, S;Negara, MA;Modreanu, M;Hurley, PK;O'Connell, D;McDonnell, S;Hughes, G;Wright, S;Barklie, RC;Bailey, P;Noakes, TCQ (2008) 'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'. Journal of Applied Physics, 104 [DOI] [Details]
2008 'GaAs interfacial self-cleaning by atomic layer deposition'
C. L. Hinkle , A. M. Sonnet , E. M. Vogel , Stephen McDonnell , Greg Hughes , M. Milojevic , B. Lee , F. S. Aguirre-Tostado , K. J. Choi , H. C. Kim , J. Kim , R. M. Wallace (2008) 'GaAs interfacial self-cleaning by atomic layer deposition'. APPLIED PHYSICS LETTERS (PRINT), 92 :071901-1 [Details]
2008 'Indium stability on InGaAs during atomic H surface cleaning '
F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes (2008) 'Indium stability on InGaAs during atomic H surface cleaning '. APPLIED PHYSICS LETTERS (PRINT), 92 [Details]
2007 'Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation '
C. L. Hinkle, A. M. Sonnet, and E. M. Vogel S. McDonnell and G. J.Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace (2007) 'Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation '. APPLIED PHYSICS LETTERS (PRINT), 91 [Details]
2007 'Investigation of varying C4F8/O-2 gas ratios on the plasma etching of carbon doped ultra-low-k dielectric layers'
Reid, I;Hughes, G (2007) 'Investigation of varying C4F8/O-2 gas ratios on the plasma etching of carbon doped ultra-low-k dielectric layers'. Semiconductor Science and Technology, 22 :636-640 [DOI] [Details]
2007 'Two types of the sulphur induced reconstructions of Au(110) surface'
Sergey A. Krasnikov, Greg Hughes and Attilio A. Cafolla (2007) 'Two types of the sulphur induced reconstructions of Au(110) surface'. SURFACE SCIENCE, 601 :3506-3511 [Details]
2007 'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'
Hurley, PK;Cherkaoui, K;McDonnell, S;Hughes, G;Groenland, AW (2007) 'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'. Microelectronics and Reliability, 47 :1195-1201 [DOI] [Details]
2007 'Sulphur overlayers on the Au(110) surface: LEED and TPD study'
Krasnikov, SA;Hughes, G;Cafolla, AA (2007) 'Sulphur overlayers on the Au(110) surface: LEED and TPD study'. Surface Science, 601 :3506-3511 [DOI] [Details]
2007 'Electronic structure characterization of Ultra Low-k (ULK) Carbon Doped Oxide (CDO) using X-ray emission spectroscopy'
I. Reid, Y. Zhang, A. DeMasi, G. Hughes and K. E. Smith (2007) 'Electronic structure characterization of Ultra Low-k (ULK) Carbon Doped Oxide (CDO) using X-ray emission spectroscopy'. THIN SOLID FILMS, Available on line 18th Sept [Details]
2006 'Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature'
Mahfujur Rahman, I. Reid, P. Duggan, D.P. Dowling, G. Hughes and M.S.J. Hashmi (2006) 'Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature'. SURFACE AND COATINGS TECHNOLOGY, [Details]
2006 'Photoemission studies of pulsed-RF plasma nitrided ultra-thin SiON dielectric layers'
O'Connor, R;McDonnell, S;Hughes, G;Smith, KE (2006) 'Photoemission studies of pulsed-RF plasma nitrided ultra-thin SiON dielectric layers'. Surface Science, 600 :532-536 [DOI] [Details]
2006 'Synchrotron photoemission studies of pentacene films on Cu(110)'
McDonald, O;Cafolla, AA;Li, ZS;Hughes, G (2006) 'Synchrotron photoemission studies of pentacene films on Cu(110)'. Surface Science, 600 :1909-1916 [DOI] [Details]
2006 'Influence of plasma parameters on the chemical composition of steady-state fluorocarbon films deposited on carbon-doped low-k dielectric layers during etching'
Reid, I;Hughes, G (2006) 'Influence of plasma parameters on the chemical composition of steady-state fluorocarbon films deposited on carbon-doped low-k dielectric layers during etching'. Semiconductor Science and Technology, 21 :1354-1357 [DOI] [Details]
2006 'X-ray photoernission and X-ray absorption studies of Hf-silicate dielectric layers'
O'Connor, R;Hughes, G;Glans, PA;Learmonth, T;Smith, KE (2006) 'X-ray photoernission and X-ray absorption studies of Hf-silicate dielectric layers'. Applied Surface Science, 253 :2770-2775 [DOI] [Details]
2006 'Suppression of carbon depletion from carbon-doped low-k dielectric layers during fluorocarbon based plasma etching'
Reid, I;Krastev, V;Hughes, G (2006) 'Suppression of carbon depletion from carbon-doped low-k dielectric layers during fluorocarbon based plasma etching'. Microelectronic Engineering, 83 :2458-2461 [DOI] [Details]
2006 'Photoemission, NEXAFS and STM studies of pentacene thin films on Au(100)'
McDonald, O;Cafolla, AA;Carty, D;Sheerin, G;Hughes, G (2006) 'Photoemission, NEXAFS and STM studies of pentacene thin films on Au(100)'. Surface Science, 600 :3217-3225 [DOI] [Details]
2005 'Temperature-accelerated breakdown in ultra-thin SiON dielectrics'
Robert O’Connor, Greg Hughes, Robin Degraeve, Ben Kaczer (2005) 'Temperature-accelerated breakdown in ultra-thin SiON dielectrics'. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 :1254-1258 [Details]
2005 'Influence of C4F8/Ar/O-2 plasma etching on SiO2 surface chemistry'
Krastev, V;Reid, I;Galassi, C;Hughes, G;McGlynn, E (2005) 'Influence of C4F8/Ar/O-2 plasma etching on SiO2 surface chemistry'. Journal of Materials Science: Materials in Electronics, 16 :541-547 [DOI] [Details]
2005 'Synchrotron radiation photoemission studies of the pentacene - Ag/Si(111) root 3 x root 3 interface'
Hughes, G;Carty, D;McDonald, O;Cafolla, AA (2005) 'Synchrotron radiation photoemission studies of the pentacene - Ag/Si(111) root 3 x root 3 interface'. Surface Science, 580 :167-172 [DOI] [Details]
2005 'Reliability of HfSiON gate dielectrics'
O'Connor, R;Hughes, G;Degraeve, R;Kaczer, B;Kauerauf, T (2005) 'Reliability of HfSiON gate dielectrics'. Semiconductor Science and Technology, 20 :68-71 [DOI] [Details]
2005 'Low voltage stress-induced leakage current in 1.4-2.1 nm SiON and HfSiON gate dielectric layers'
O'Connor, R;McDonnell, S;Hughes, G;Degraeve, R;Kauerauf, T (2005) 'Low voltage stress-induced leakage current in 1.4-2.1 nm SiON and HfSiON gate dielectric layers'. Semiconductor Science and Technology, 20 :668-672 [DOI] [Details]
2005 'Core level photoemission studies of the interaction of pentacene with the Si(111) (7 x 7) surface'
Hughes, G;Carty, D;Cafolla, AA (2005) 'Core level photoemission studies of the interaction of pentacene with the Si(111) (7 x 7) surface'. Surface Science, 582 :90-96 [DOI] [Details]
2005 'Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing'
O'Connor, R;Hughes, G;Degraeve, R;Kaczer, B (2005) 'Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing'. Microelectronic Engineering, 77 :302-309 [DOI] [Details]
2004 'Temperature-accelerated breakdown in ultra-thin SiON dielectrics'
O'Connor, R;Hughes, G;Degraeve, R;Kaczer, B (2004) 'Temperature-accelerated breakdown in ultra-thin SiON dielectrics'. Semiconductor Science and Technology, 19 :1254-1258 [DOI] [Details]
2004 'Weibull Slope and Voltage Acceleration of Ultra-thin (1.1- 1.45 nm EOT) Oxynitrides. '
Robert O'Connor, Robin Degraeve, Ben Kaczer, Anabela Veloso, Greg Hughes and Guido Groeseneken. (2004) 'Weibull Slope and Voltage Acceleration of Ultra-thin (1.1- 1.45 nm EOT) Oxynitrides. '. MICROELECTRONIC ENGINEERING, * :*-* [Details]
2004 'Long-range order in a multilayer organic film templated by a molecular-induced surface reconstruction: Pentacene on Au(110)'
Guaino, P;Carty, D;Hughes, G;McDonald, O;Cafolla, AA (2004) 'Long-range order in a multilayer organic film templated by a molecular-induced surface reconstruction: Pentacene on Au(110)'. Applied Physics Letters, 85 :2777-2779 [DOI] [Details]
2004 'Progressive breakdown in ultra-thin SiON dielectrics and its effect on transistor performance'
O’Connor,R. Hughes,G. Degraeve,R, Kaczer,B. (2004) 'Progressive breakdown in ultra-thin SiON dielectrics and its effect on transistor performance'. MICROELECTRONIC ENGINEERING, 45 :869-874 [Details]
2004 '65. Structural study of the Cu(100) – p(2x2)-Sb surface alloy using low energy electron diffraction'
AlShamaileh,E. Pussi,K. McEvoy,T, Lindroos,M. Hughes, G.Cafolla,A.A. (2004) '65. Structural study of the Cu(100) – p(2x2)-Sb surface alloy using low energy electron diffraction'. SURFACE SCIENCE, 566-568 :52-57 [Details]
2003 'An STM investigation of the interaction and ordering of pentacene molecules on the Ag/Si(111)-(root 3 x root 3)R30 degrees surface'
Guaino, P;Cafolla, AA;Carty, D;Sheerin, G;Hughes, G (2003) 'An STM investigation of the interaction and ordering of pentacene molecules on the Ag/Si(111)-(root 3 x root 3)R30 degrees surface'. Surface Science, 540 :107-116 [DOI] [Details]
2003 'Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption'
McGuinness, C;Fu, DF;Downes, JE;Smith, KE;Hughes, G;Roche, J (2003) 'Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption'. Journal of Applied Physics, 94 :3919-3922 [DOI] [Details]
2003 'Scanning Tunneling Microscopy Study of Pentacene Adsorption on the Ag/Si(111)-(v3 x v3)R30o. '
Ph. Guaino, D. Carty, G. Hughes, P. Moriarty and A.A.Cafolla (2003) 'Scanning Tunneling Microscopy Study of Pentacene Adsorption on the Ag/Si(111)-(v3 x v3)R30o. '. APPLIED PHYSICS LETTERS (PRINT), 212-213 :537-541 [Details]
2003 'Scanning tunnelling spectroscopy of low pentacene coverage on the Ag/Si(111)-(root 3 x root 3) surface'
Guaino, P;Cafolla, AA;McDonald, O;Carty, D;Sheerin, G;Hughes, G (2003) 'Scanning tunnelling spectroscopy of low pentacene coverage on the Ag/Si(111)-(root 3 x root 3) surface'. Journal of Physics Condensed Matter, 15 :2693-2698 [Details]
2002 'Core Level Photoemission and Scanning Tunneling Microscopy study of the interaction of pentacene with the Si(100) surface. '
Greg Hughes, Jason Roche, Darren Carty and Tony Cafolla Kevin E. Smith (2002) 'Core Level Photoemission and Scanning Tunneling Microscopy study of the interaction of pentacene with the Si(100) surface. '. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, 20(4) :1620-1625 [Details]
2000 'The deposition of transition metal layers on sulphur terminated InP(100) surfaces studies by core level photoemission spectroscopy'
G.J.Hughes, P.Ryan,P. Quinn and A.A.Cafolla (2000) 'The deposition of transition metal layers on sulphur terminated InP(100) surfaces studies by core level photoemission spectroscopy'. VACUUM, 57 :131-138 [Details]
2000 'Core-level photoemission studies of the sulphur-terminated Si(100) surface'
Roche, J;Ryan, P;Hughes, G (2000) 'Core-level photoemission studies of the sulphur-terminated Si(100) surface'. Surface Science, 465 :115-119 [Details]
1999 'Core level photoemission studies of the deposition of thin manganese layers on sulphur terminated InP(100) surfaces. '
G.J.Hughes, P Ryan, P.Quinn and A.A. Cafolla (1999) 'Core level photoemission studies of the deposition of thin manganese layers on sulphur terminated InP(100) surfaces. '. SURFACE SCIENCE, 431 :1-7 [Details]
1998 'An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces'
Deegan T Hughes G (1998) 'An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces'. APPLIED SURFACE SCIENCE, 123 :66-70 [Details]
1998 'Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100)surfaces'
Hearne S Hughes G (1998) 'Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100)surfaces'. APPLIED SURFACE SCIENCE, 123 :176-180 [Details]
1997 'Absence of long-range ordered reconstruction on the GaAs(311)A surface'
Moriarty, P;Ma, YR;Dunn, AW;Beton, PH;Henini, M;McGinley, C;McLoughlin, E;Cafolla, AA;Hughes, G;Downes, S;Teehan, D;Murphy, B (1997) 'Absence of long-range ordered reconstruction on the GaAs(311)A surface'. Physical Review B, 55 :15397-15400 [Details]
1997 'Self-assembly of monolayers of semiconductor nanocrystallites'
Rizza R Fitzmaurice D Hearne S Hughes G Spoto G Ciliberto E Kerp H Schropp R (1997) 'Self-assembly of monolayers of semiconductor nanocrystallites'. CHEMISTRY OF MATERIALS, 9 :2969-2982 [Details]
1997 'Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction'
Cafolla AA McGinley C McLoughlin E Hughes G Moriarty P Dunn AW Ma YR Teehan D Murphy B Downes S Woolf DA (1997) 'Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction'. SURFACE SCIENCE, 377 :130-134 [Details]
1997 'Self-assembly of monolayers of semiconductor nanocrystallites'
Rizza, R;Fitzmaurice, D;Hearne, S;Hughes, G;Spoto, G;Ciliberto, E;Kerp, H;Schropp, R (1997) 'Self-assembly of monolayers of semiconductor nanocrystallites'. Chemistry of Materials, 9 :2969-2982 [Details]
1995 'A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF MOLECULAR SULFUR ADSORPTION ON THE GAAS(100) SURFACE'
HUGHES, G;SPRINGER, C;RESCH, U;ESSER, N;RICHTER, W (1995) 'A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF MOLECULAR SULFUR ADSORPTION ON THE GAAS(100) SURFACE'. Journal of Applied Physics, 78 :1948-1952 [Details]
1995 'CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE'
MORIARTY, P;MURPHY, B;ROBERTS, L;CAFOLLA, AA;HUGHES, G;KOENDERS, L;BAILEY, P;WOOLF, DA (1995) 'CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE'. Applied Physics Letters, 67 :383-385 [Details]
1994 'PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE'
MORIARTY, P;MURPHY, B;ROBERTS, L;CAFOLLA, AA;HUGHES, G;KOENDERS, L;BAILEY, P (1994) 'PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE'. Physical Review B, 50 :14237-14245 [Details]
1994 'CHEMICAL AND STRUCTURAL STUDIES OF THE INTERACTIONS OF MOLECULAR SULFUR WITH THE GAAS(111)A AND GAAS(111)B SURFACES'
MURPHY, B;MORIARTY, P;ROBERTS, L;CAFOLLA, T;HUGHES, G;KOENDERS, L;BAILEY, P (1994) 'CHEMICAL AND STRUCTURAL STUDIES OF THE INTERACTIONS OF MOLECULAR SULFUR WITH THE GAAS(111)A AND GAAS(111)B SURFACES'. Surface Science, 317 :73-83 [Details]
1993 'SCANNING-TUNNELING-MICROSCOPY STUDY OF THE AMBIENT OXIDATION OF PASSIVATED GAAS(100) SURFACES'
MORIARTY P MURPHY B HUGHES G (1993) 'SCANNING-TUNNELING-MICROSCOPY STUDY OF THE AMBIENT OXIDATION OF PASSIVATED GAAS(100) SURFACES'. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, 11 :1099-1105 [Details]
1993 'VACANCY CREATION ON THE SI(111)-7X7 SURFACE DUE TO SULFUR DESORPTION STUDIED BY SCANNING-TUNNELING-MICROSCOPY'
KOENDERS L MORIARTY P HUGHES G JUSKO O (1993) 'VACANCY CREATION ON THE SI(111)-7X7 SURFACE DUE TO SULFUR DESORPTION STUDIED BY SCANNING-TUNNELING-MICROSCOPY'. SURFACE SCIENCE, 297 :L113-L118 [Details]
1993 'OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .1. GETTING THE DATA INTO THE WINDOWS ENVIRONMENT'
FENNEMA, BDJR;FORSTER, RJ;VOS, JG;HUGHES, G;DIAMOND, D (1993) 'OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .1. GETTING THE DATA INTO THE WINDOWS ENVIRONMENT'. TrAC - Trends in Analytical Chemistry, 12 :1-3 [Details]
1993 'A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY OF THE DEPOSITION OF TITANIUM ON AN OXIDIZED GAAS(100) SURFACE'
ROBERTS, L;HUGHES, G;FENNEMA, B;CARBERY, M (1993) 'A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY OF THE DEPOSITION OF TITANIUM ON AN OXIDIZED GAAS(100) SURFACE'. Semiconductor Science and Technology, 8 :647-651 [Details]
1993 'OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .2. PROCESSING THE DATA USING EXCEL'
FENNEMA, BDJR;FORSTER, RJ;VOS, JG;HUGHES, G;DIAMOND, D (1993) 'OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .2. PROCESSING THE DATA USING EXCEL'. TrAC - Trends in Analytical Chemistry, 12 :37-40 [Details]
1993 'SULFUR-INDUCED C(4X4) RECONSTRUCTION OF THE SI(001) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY'
MORIARTY P KOENDERS L HUGHES G (1993) 'SULFUR-INDUCED C(4X4) RECONSTRUCTION OF THE SI(001) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY'. PHYSICAL REVIEW B-CONDENSED MATTER, 47 :15950-15953 [Details]
1993 'WAVE-FUNCTION IMAGING OF THE PBS(001) SURFACE WITH SCANNING- TUNNELING-MICROSCOPY'
ETTEMA ARHF HAAS C MORIARTY P HUGHES G (1993) 'WAVE-FUNCTION IMAGING OF THE PBS(001) SURFACE WITH SCANNING- TUNNELING-MICROSCOPY'. SURFACE SCIENCE, 287 :1106-1111 [Details]
1992 'ATOMIC RESOLVED MATERIAL DISPLACEMENT ON GRAPHITE SURFACES BY SCANNING TUNNELING MICROSCOPY'
MORIARTY, P;HUGHES, G (1992) 'ATOMIC RESOLVED MATERIAL DISPLACEMENT ON GRAPHITE SURFACES BY SCANNING TUNNELING MICROSCOPY'. Applied Physics Letters, 60 :2338-2340 [Details]
1992 'VACUUM ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INTERACTION OF MOLECULAR SULFUR WITH THE GAAS(100) SURFACE'
ROBERTS, L;HUGHES, G;FENNEMA, B;CARBERY, M (1992) 'VACUUM ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INTERACTION OF MOLECULAR SULFUR WITH THE GAAS(100) SURFACE'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 10 :1862-1866 [Details]
1992 'THE PHOTOELECTRON BAND-STRUCTURE OF MOLYBDENUM-DISULFIDE'
FIVES, K;MCGOVERN, IT;MCGRATH, R;CIMINO, R;HUGHES, G;MCKINLEY, A;THORNTON, G (1992) 'THE PHOTOELECTRON BAND-STRUCTURE OF MOLYBDENUM-DISULFIDE'. Journal of Physics Condensed Matter, 4 :5639-5646 [Details]
1992 'AN INVESTIGATION OF THE EARLY STAGES OF NATIVE OXIDE-GROWTH ON CHEMICALLY ETCHED AND SULFUR-TREATED GAAS(100) AND INP(100) SURFACES BY SCANNING TUNNELING MICROSCOPY'
MORIARTY P HUGHES G (1992) 'AN INVESTIGATION OF THE EARLY STAGES OF NATIVE OXIDE-GROWTH ON CHEMICALLY ETCHED AND SULFUR-TREATED GAAS(100) AND INP(100) SURFACES BY SCANNING TUNNELING MICROSCOPY'. ULTRAMICROSCOPY, 42 :956-961 [Details]
1991 'AN INVESTIGATION OF METAL GAAS(100) INTERFACES BY DEEP LEVEL TRANSIENT SPECTROSCOPY'
ROBERTS, L;HUGHES, G (1991) 'AN INVESTIGATION OF METAL GAAS(100) INTERFACES BY DEEP LEVEL TRANSIENT SPECTROSCOPY'. Applied Surface Science, 50 :424-427 [Details]
1987 'Comparative study of Yittrium and other Transition Metals on GaAs (110). '
F. Schaeffler, G.J. Hughes, W. Drube, R. Ludeke, F.J. Himpsel. (1987) 'Comparative study of Yittrium and other Transition Metals on GaAs (110). '. PHYSICAL REVIEW B-CONDENSED MATTER, 35 :6328-6336 [Details]
1987 'Sb/GaAs (110) interface: A re-evaluation. '
F. Schaeffler, R. Ludeke, A. Taleb-Ibrahimi, G.J. Hughes, D. Rieger. (1987) 'Sb/GaAs (110) interface: A re-evaluation. '. PHYSICAL REVIEW B-CONDENSED MATTER, B36 :1328-1332 [Details]
1987 'Metal-induced impurity states at the InP-transition metal interfaces. '
F. Schaeffler, W. Drube, G.J. Hughes, R. Ludeke, D. Rieger, F.J. Himpsel. (1987) 'Metal-induced impurity states at the InP-transition metal interfaces. '. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, A5(4) :1528-1533 [Details]
1986 'Oxygen-1s studies of the oxidation of InP (110) and GaAs (110) surfaces. '
G.J. Hughes, R. Ludeke. (1986) 'Oxygen-1s studies of the oxidation of InP (110) and GaAs (110) surfaces. '. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, B(4)4 :1109-1114 [Details]
1986 'Carbon - Is excitation studies of diamond (111)I: Surface core levels. '
J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley. (1986) 'Carbon - Is excitation studies of diamond (111)I: Surface core levels. '. PHYSICAL REVIEW B-CONDENSED MATTER, B33 :1340-1345 [Details]
1986 'Early stages in the formation of the InP (110) - oxide interface'
G. Hollinger, G.J. Hughes, F.J. Himpsel, F. Houzay, J.L. Jordan, J.F. Morar. (1986) 'Early stages in the formation of the InP (110) - oxide interface'. SURFACE SCIENCE, 168 :617-625 [Details]
1986 'Si(111) surface oxidation- O 1s core-level study using synchrotron radiation'
G. Hollinger, J.F.Morar, F.J.Himpsel, G.J.Hughes and J.L.Jordan, (1986) 'Si(111) surface oxidation- O 1s core-level study using synchrotron radiation'. SURFACE SCIENCE, 168 :609-616 [Details]
1986 'Carbon - 1s excitation studies of diamond (111) I: Surface core levels'
J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley. (1986) 'Carbon - 1s excitation studies of diamond (111) I: Surface core levels'. PHYSICAL REVIEW B-CONDENSED MATTER, B33 :1340-1345 [Details]
1986 'Carbon - 1s excitation studies of diamond (111)II: Unoccupied surface states'
J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley. (1986) 'Carbon - 1s excitation studies of diamond (111)II: Unoccupied surface states'. PHYSICAL REVIEW B-CONDENSED MATTER, B33 :1346-1349 [Details]
1986 'Structure and bonding of the CaF /Si(111) interface. '
F.J. Himpsel, F.U. Hillebrecht, G.J. Hughes, J.L. Jordan, U. Karlsson, F.R. McFeeley, J.F. Morar, D. Rieger. (1986) 'Structure and bonding of the CaF /Si(111) interface. '. JOURNAL OF APPLIED PHYSICS, 48 :1327-1332 [Details]
1986 'Transition metal overlayers on GaAs (110): A case for extrinsic surface states. '
G.J. Hughes, R. Ludeke, F. Schaeffler, D. Rieger. (1986) 'Transition metal overlayers on GaAs (110): A case for extrinsic surface states. '. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, B(4)4 :924-930 [Details]
1985 'The adsorption of tin layers on cleaned InP (110) surfaces'
T.P. Humphreys, G.J. Hughes, A. McKinley, E.C. Cunningham, R.H. Williams. (1985) 'The adsorption of tin layers on cleaned InP (110) surfaces'. SURFACE SCIENCE, 152/153 :1222-1227 [Details]
1985 'High resolution photoemission investigation; the oxidation of tungsten'
J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, R.F. McFeely. (1985) 'High resolution photoemission investigation; the oxidation of tungsten'. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 3 :1476-1480 [Details]
1985 'Oxygen-Is core level studies of the oxidation of GaAs (110)'
G.J. Hughes, R. Ludeke, J.F. Morar, J.L. Jordan. (1985) 'Oxygen-Is core level studies of the oxidation of GaAs (110)'. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, :1079-1080 [Details]
1985 'Observation of a core excitation in diamond (111)'
J.F. Morar, F.J. Himpsel, G. Hollinger, G.J. Hughes, J.L. Jordan. (1985) 'Observation of a core excitation in diamond (111)'. PHYSICAL REVIEW LETTERS, 54 :1960-1963 [Details]
1984 'Metal contacts on semiconductors: The adsorption of Sb, Sn and Ga on InP110) cleaned surfaces'
R.H. Williams, A. McKinley, G.H. Hughes, C. Maani, T.P. Humphreys. (1984) 'Metal contacts on semiconductors: The adsorption of Sb, Sn and Ga on InP110) cleaned surfaces'. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2 :561-568 [Details]
1983 'Soft x-ray photoemission spectroscopy of chemical reactivity at metal- GaSe Interfaces'
I.T. McGovern, J.F. McGilp, G.J. Hughes, A. McKinley, R.H. Williams, D. Norman. (1983) 'Soft x-ray photoemission spectroscopy of chemical reactivity at metal- GaSe Interfaces'. VACUUM, 33 :607-612 [Details]
1983 'The adsorption of Ga and Sb on cleaved InP surfaces'
C. Maani, A. McKinley, G.J. Hughes, R.H. Williams (1983) 'The adsorption of Ga and Sb on cleaved InP surfaces'. VACUUM, Vol. 33 :597-600 [Details]
1983 'Nickel and copper on cleaned InP (110); Structure, metallurgy and electronic properties'
G.J. Hughes, A. McKinley, R.H. Williams. (1983) 'Nickel and copper on cleaned InP (110); Structure, metallurgy and electronic properties'. JOURNAL OF PHYSICS C: SOLID STATE PHYSICS, 16 :2391-2406 [Details]
1982 'Metal-GaSe and metal-InP interfaces – Schottky Barrier formation and interface reactions'
R.H.Williams, A.McKinley, G.J.Hughes, V. Montgomery and I.T.McGovern (1982) 'Metal-GaSe and metal-InP interfaces – Schottky Barrier formation and interface reactions'. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACE, 21 :594-598 [Details]
1982 'Aluminium overlayers on InP (110)- microscopic aspects of interface formation'
A. McKinley, G.J. Hughes, R.H. Williams. (1982) 'Aluminium overlayers on InP (110)- microscopic aspects of interface formation'. JOURNAL OF PHYSICS C: SOLID STATE PHYSICS, 15 :7049-7063 [Details]
1982 'Metal-gallium selenide interfaces - observation of the true Schottky limit'
G.J. Hughes, A. McKinley, R.H. Williams, I.T. McGovern. (1982) 'Metal-gallium selenide interfaces - observation of the true Schottky limit'. JOURNAL OF PHYSICS C: SOLID STATE PHYSICS, 15 :159-164 [Details]
1981 'The influence of adlayers on Schottky barrier formation: The adsorption of Hydrogen Sulphide and Water on InP (110) surfaces'
G. Hughes, T.P. Humphreys, V. Montgomery, R.H. Williams. (1981) 'The influence of adlayers on Schottky barrier formation: The adsorption of Hydrogen Sulphide and Water on InP (110) surfaces'. VACUUM, 33 :539-541 [Details]
1980 'Atomically clean semiconductor surfaces prepared by laser irradiation'
A. McKinley, A.W. Parks, G.J. Hughes, J. Fryar, R.H. Williams. (1980) 'Atomically clean semiconductor surfaces prepared by laser irradiation'. JOURNAL OF PHYSICS D-APPLIED PHYSICS (PRINT), 13 :193-197 [Details]

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